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# Copyright (c) 2012-2021 Arm Limited
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# Copyright (c) 2013 Amin Farmahini-Farahani
# Copyright (c) 2015 University of Kaiserslautern
# Copyright (c) 2015 The University of Bologna
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"""Interfaces for HMC memory devices
These memory "interfaces" contain the timing,energy,etc parameters for each
memory type and are usually based on datasheets for the memory devices.
You can use these interfaces in the MemCtrl object as the `dram` timing
interface.
Note that HMC is configured differently than some other DRAM interfaces.
"""
class HMC_2500_1x32(DDR3_1600_8x8):
"""
A single HMC-2500 x32 model based on:
[1] DRAMSpec: a high-level DRAM bank modelling tool
developed at the University of Kaiserslautern. This high level tool
uses RC (resistance-capacitance) and CV (capacitance-voltage) models to
estimate the DRAM bank latency and power numbers.
[2] High performance AXI-4.0 based interconnect for extensible smart memory
cubes (E. Azarkhish et. al)
Assumed for the HMC model is a 30 nm technology node.
The modelled HMC consists of 4 Gbit layers which sum up to 2GiB of memory
(4 layers).
Each layer has 16 vaults and each vault consists of 2 banks per layer.
In order to be able to use the same controller used for 2D DRAM generations
for HMC, the following analogy is done:
Channel (DDR) => Vault (HMC)
device_size (DDR) => size of a single layer in a vault
ranks per channel (DDR) => number of layers
banks per rank (DDR) => banks per layer
devices per rank (DDR) => devices per layer ( 1 for HMC).
The parameters for which no input is available are inherited from the DDR3
configuration.
This configuration includes the latencies from the DRAM to the logic layer
of the HMC
"""
# size of device
# two banks per device with each bank 4MiB [2]
device_size = "8MiB"
# 1x32 configuration, 1 device with 32 TSVs [2]
device_bus_width = 32
# HMC is a BL8 device [2]
burst_length = 8
# Each device has a page (row buffer) size of 256 bytes [2]
device_rowbuffer_size = "256B"
# 1x32 configuration, so 1 device [2]
devices_per_rank = 1
# 4 layers so 4 ranks [2]
ranks_per_channel = 4
# HMC has 2 banks per layer [2]
# Each layer represents a rank. With 4 layers and 8 banks in total, each
# layer has 2 banks; thus 2 banks per rank.
banks_per_rank = 2
# 1250 MHz [2]
tCK = "0.8ns"
# 8 beats across an x32 interface translates to 4 clocks @ 1250 MHz
tBURST = "3.2ns"
# Values using DRAMSpec HMC model [1]
tRCD = "10.2ns"
tCL = "9.9ns"
tRP = "7.7ns"
tRAS = "21.6ns"
# tRRD depends on the power supply network for each vendor.
# We assume a tRRD of a double bank approach to be equal to 4 clock
# cycles (Assumption)
tRRD = "3.2ns"
# activation limit is set to 0 since there are only 2 banks per vault
# layer.
activation_limit = 0
# Values using DRAMSpec HMC model [1]
tRFC = "59ns"
tWR = "8ns"
tRTP = "4.9ns"
# Default different rank bus delay assumed to 1 CK for TSVs, @1250 MHz =
# 0.8 ns (Assumption)
tCS = "0.8ns"
# Value using DRAMSpec HMC model [1]
tREFI = "3.9us"
# The default page policy in the vault controllers is simple closed page
# [2] nevertheless 'close' policy opens and closes the row multiple times
# for bursts largers than 32Bytes. For this reason we use 'close_adaptive'
page_policy = "close_adaptive"
# RoCoRaBaCh resembles the default address mapping in HMC
addr_mapping = "RoCoRaBaCh"
# These parameters do not directly correlate with buffer_size in real
# hardware. Nevertheless, their value has been tuned to achieve a
# bandwidth similar to the cycle-accurate model in [2]
write_buffer_size = 32
read_buffer_size = 32
def controller(self):
"""
Instantiate the memory controller and bind it to
the current interface.
"""
controller = MemCtrl(
min_writes_per_switch=8,
static_backend_latency="4ns",
static_frontend_latency="4ns",
)
controller.dram = self
return controller