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# Copyright (c) 2012-2020 ARM Limited
# All rights reserved.
#
# The license below extends only to copyright in the software and shall
# not be construed as granting a license to any other intellectual
# property including but not limited to intellectual property relating
# to a hardware implementation of the functionality of the software
# licensed hereunder. You may use the software subject to the license
# terms below provided that you ensure that this notice is replicated
# unmodified and in its entirety in all distributions of the software,
# modified or unmodified, in source code or in binary form.
#
# Copyright (c) 2013 Amin Farmahini-Farahani
# Copyright (c) 2015 University of Kaiserslautern
# Copyright (c) 2015 The University of Bologna
# All rights reserved.
#
# Redistribution and use in source and binary forms, with or without
# modification, are permitted provided that the following conditions are
# met: redistributions of source code must retain the above copyright
# notice, this list of conditions and the following disclaimer;
# redistributions in binary form must reproduce the above copyright
# notice, this list of conditions and the following disclaimer in the
# documentation and/or other materials provided with the distribution;
# neither the name of the copyright holders nor the names of its
# contributors may be used to endorse or promote products derived from
# this software without specific prior written permission.
#
# THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS
# "AS IS" AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT
# LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR
# A PARTICULAR PURPOSE ARE DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT
# OWNER OR CONTRIBUTORS BE LIABLE FOR ANY DIRECT, INDIRECT, INCIDENTAL,
# SPECIAL, EXEMPLARY, OR CONSEQUENTIAL DAMAGES (INCLUDING, BUT NOT
# LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES; LOSS OF USE,
# DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER CAUSED AND ON ANY
# THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY, OR TORT
# (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE
# OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.
from m5.objects.MemInterface import *
# Enum for the page policy, either open, open_adaptive, close, or
# close_adaptive.
class PageManage(Enum): vals = ['open', 'open_adaptive', 'close',
'close_adaptive']
class DRAMInterface(MemInterface):
type = 'DRAMInterface'
cxx_header = "mem/mem_interface.hh"
# scheduler page policy
page_policy = Param.PageManage('open_adaptive', "Page management policy")
# enforce a limit on the number of accesses per row
max_accesses_per_row = Param.Unsigned(16, "Max accesses per row before "
"closing");
# default to 0 bank groups per rank, indicating bank group architecture
# is not used
# update per memory class when bank group architecture is supported
bank_groups_per_rank = Param.Unsigned(0, "Number of bank groups per rank")
# Enable DRAM powerdown states if True. This is False by default due to
# performance being lower when enabled
enable_dram_powerdown = Param.Bool(False, "Enable powerdown states")
# For power modelling we need to know if the DRAM has a DLL or not
dll = Param.Bool(True, "DRAM has DLL or not")
# DRAMPower provides in addition to the core power, the possibility to
# include RD/WR termination and IO power. This calculation assumes some
# default values. The integration of DRAMPower with gem5 does not include
# IO and RD/WR termination power by default. This might be added as an
# additional feature in the future.
# timing behaviour and constraints - all in nanoseconds
# the amount of time in nanoseconds from issuing an activate command
# to the data being available in the row buffer for a read/write
tRCD = Param.Latency("RAS to CAS delay")
# the time from issuing a read/write command to seeing the actual data
tCL = Param.Latency("CAS latency")
# minimum time between a precharge and subsequent activate
tRP = Param.Latency("Row precharge time")
# minimum time between an activate and a precharge to the same row
tRAS = Param.Latency("ACT to PRE delay")
# minimum time between a write data transfer and a precharge
tWR = Param.Latency("Write recovery time")
# minimum time between a read and precharge command
tRTP = Param.Latency("Read to precharge")
# tBURST_MAX is the column array cycle delay required before next access,
# which could be greater than tBURST when the memory access time is greater
# than tBURST
tBURST_MAX = Param.Latency(Self.tBURST, "Column access delay")
# tBURST_MIN is the minimum delay between bursts, which could be less than
# tBURST when interleaving is supported
tBURST_MIN = Param.Latency(Self.tBURST, "Minimim delay between bursts")
# CAS-to-CAS delay for bursts to the same bank group
# only utilized with bank group architectures; set to 0 for default case
# tBURST is equivalent to tCCD_S; no explicit parameter required
# for CAS-to-CAS delay for bursts to different bank groups
tCCD_L = Param.Latency("0ns", "Same bank group CAS to CAS delay")
# Write-to-Write delay for bursts to the same bank group
# only utilized with bank group architectures; set to 0 for default case
# This will be used to enable different same bank group delays
# for writes versus reads
tCCD_L_WR = Param.Latency(Self.tCCD_L,
"Same bank group Write to Write delay")
# time taken to complete one refresh cycle (N rows in all banks)
tRFC = Param.Latency("Refresh cycle time")
# refresh command interval, how often a "ref" command needs
# to be sent. It is 7.8 us for a 64ms refresh requirement
tREFI = Param.Latency("Refresh command interval")
# write-to-read, same rank turnaround penalty for same bank group
tWTR_L = Param.Latency(Self.tWTR, "Write to read, same rank switching "
"time, same bank group")
# minimum precharge to precharge delay time
tPPD = Param.Latency("0ns", "PRE to PRE delay")
# maximum delay between two-cycle ACT command phases
tAAD = Param.Latency(Self.tCK,
"Maximum delay between two-cycle ACT commands")
two_cycle_activate = Param.Bool(False,
"Two cycles required to send activate")
# minimum row activate to row activate delay time
tRRD = Param.Latency("ACT to ACT delay")
# only utilized with bank group architectures; set to 0 for default case
tRRD_L = Param.Latency("0ns", "Same bank group ACT to ACT delay")
# time window in which a maximum number of activates are allowed
# to take place, set to 0 to disable
tXAW = Param.Latency("X activation window")
activation_limit = Param.Unsigned("Max number of activates in window")
# time to exit power-down mode
# Exit power-down to next valid command delay
tXP = Param.Latency("0ns", "Power-up Delay")
# Exit Powerdown to commands requiring a locked DLL
tXPDLL = Param.Latency("0ns", "Power-up Delay with locked DLL")
# time to exit self-refresh mode
tXS = Param.Latency("0ns", "Self-refresh exit latency")
# time to exit self-refresh mode with locked DLL
tXSDLL = Param.Latency("0ns", "Self-refresh exit latency DLL")
# number of data beats per clock. with DDR, default is 2, one per edge
# used in drampower.cc
beats_per_clock = Param.Unsigned(2, "Data beats per clock")
data_clock_sync = Param.Bool(False, "Synchronization commands required")
# Currently rolled into other params
######################################################################
# tRC - assumed to be tRAS + tRP
# Power Behaviour and Constraints
# DRAMs like LPDDR and WideIO have 2 external voltage domains. These are
# defined as VDD and VDD2. Each current is defined for each voltage domain
# separately. For example, current IDD0 is active-precharge current for
# voltage domain VDD and current IDD02 is active-precharge current for
# voltage domain VDD2.
# By default all currents are set to 0mA. Users who are only interested in
# the performance of DRAMs can leave them at 0.
# Operating 1 Bank Active-Precharge current
IDD0 = Param.Current("0mA", "Active precharge current")
# Operating 1 Bank Active-Precharge current multiple voltage Range
IDD02 = Param.Current("0mA", "Active precharge current VDD2")
# Precharge Power-down Current: Slow exit
IDD2P0 = Param.Current("0mA", "Precharge Powerdown slow")
# Precharge Power-down Current: Slow exit multiple voltage Range
IDD2P02 = Param.Current("0mA", "Precharge Powerdown slow VDD2")
# Precharge Power-down Current: Fast exit
IDD2P1 = Param.Current("0mA", "Precharge Powerdown fast")
# Precharge Power-down Current: Fast exit multiple voltage Range
IDD2P12 = Param.Current("0mA", "Precharge Powerdown fast VDD2")
# Precharge Standby current
IDD2N = Param.Current("0mA", "Precharge Standby current")
# Precharge Standby current multiple voltage range
IDD2N2 = Param.Current("0mA", "Precharge Standby current VDD2")
# Active Power-down current: slow exit
IDD3P0 = Param.Current("0mA", "Active Powerdown slow")
# Active Power-down current: slow exit multiple voltage range
IDD3P02 = Param.Current("0mA", "Active Powerdown slow VDD2")
# Active Power-down current : fast exit
IDD3P1 = Param.Current("0mA", "Active Powerdown fast")
# Active Power-down current : fast exit multiple voltage range
IDD3P12 = Param.Current("0mA", "Active Powerdown fast VDD2")
# Active Standby current
IDD3N = Param.Current("0mA", "Active Standby current")
# Active Standby current multiple voltage range
IDD3N2 = Param.Current("0mA", "Active Standby current VDD2")
# Burst Read Operating Current
IDD4R = Param.Current("0mA", "READ current")
# Burst Read Operating Current multiple voltage range
IDD4R2 = Param.Current("0mA", "READ current VDD2")
# Burst Write Operating Current
IDD4W = Param.Current("0mA", "WRITE current")
# Burst Write Operating Current multiple voltage range
IDD4W2 = Param.Current("0mA", "WRITE current VDD2")
# Refresh Current
IDD5 = Param.Current("0mA", "Refresh current")
# Refresh Current multiple voltage range
IDD52 = Param.Current("0mA", "Refresh current VDD2")
# Self-Refresh Current
IDD6 = Param.Current("0mA", "Self-refresh Current")
# Self-Refresh Current multiple voltage range
IDD62 = Param.Current("0mA", "Self-refresh Current VDD2")
# Main voltage range of the DRAM
VDD = Param.Voltage("0V", "Main Voltage Range")
# Second voltage range defined by some DRAMs
VDD2 = Param.Voltage("0V", "2nd Voltage Range")
# A single DDR3-1600 x64 channel (one command and address bus), with
# timings based on a DDR3-1600 4 Gbit datasheet (Micron MT41J512M8) in
# an 8x8 configuration.
class DDR3_1600_8x8(DRAMInterface):
# size of device in bytes
device_size = '512MiB'
# 8x8 configuration, 8 devices each with an 8-bit interface
device_bus_width = 8
# DDR3 is a BL8 device
burst_length = 8
# Each device has a page (row buffer) size of 1 Kbyte (1K columns x8)
device_rowbuffer_size = '1KiB'
# 8x8 configuration, so 8 devices
devices_per_rank = 8
# Use two ranks
ranks_per_channel = 2
# DDR3 has 8 banks in all configurations
banks_per_rank = 8
# 800 MHz
tCK = '1.25ns'
# 8 beats across an x64 interface translates to 4 clocks @ 800 MHz
tBURST = '5ns'
# DDR3-1600 11-11-11
tRCD = '13.75ns'
tCL = '13.75ns'
tRP = '13.75ns'
tRAS = '35ns'
tRRD = '6ns'
tXAW = '30ns'
activation_limit = 4
tRFC = '260ns'
tWR = '15ns'
# Greater of 4 CK or 7.5 ns
tWTR = '7.5ns'
# Greater of 4 CK or 7.5 ns
tRTP = '7.5ns'
# Default same rank rd-to-wr bus turnaround to 2 CK, @800 MHz = 2.5 ns
tRTW = '2.5ns'
# Default different rank bus delay to 2 CK, @800 MHz = 2.5 ns
tCS = '2.5ns'
# <=85C, half for >85C
tREFI = '7.8us'
# active powerdown and precharge powerdown exit time
tXP = '6ns'
# self refresh exit time
tXS = '270ns'
# Current values from datasheet Die Rev E,J
IDD0 = '55mA'
IDD2N = '32mA'
IDD3N = '38mA'
IDD4W = '125mA'
IDD4R = '157mA'
IDD5 = '235mA'
IDD3P1 = '38mA'
IDD2P1 = '32mA'
IDD6 = '20mA'
VDD = '1.5V'
# A single HMC-2500 x32 model based on:
# [1] DRAMSpec: a high-level DRAM bank modelling tool
# developed at the University of Kaiserslautern. This high level tool
# uses RC (resistance-capacitance) and CV (capacitance-voltage) models to
# estimate the DRAM bank latency and power numbers.
# [2] High performance AXI-4.0 based interconnect for extensible smart memory
# cubes (E. Azarkhish et. al)
# Assumed for the HMC model is a 30 nm technology node.
# The modelled HMC consists of 4 Gbit layers which sum up to 2GiB of memory (4
# layers).
# Each layer has 16 vaults and each vault consists of 2 banks per layer.
# In order to be able to use the same controller used for 2D DRAM generations
# for HMC, the following analogy is done:
# Channel (DDR) => Vault (HMC)
# device_size (DDR) => size of a single layer in a vault
# ranks per channel (DDR) => number of layers
# banks per rank (DDR) => banks per layer
# devices per rank (DDR) => devices per layer ( 1 for HMC).
# The parameters for which no input is available are inherited from the DDR3
# configuration.
# This configuration includes the latencies from the DRAM to the logic layer
# of the HMC
class HMC_2500_1x32(DDR3_1600_8x8):
# size of device
# two banks per device with each bank 4MiB [2]
device_size = '8MiB'
# 1x32 configuration, 1 device with 32 TSVs [2]
device_bus_width = 32
# HMC is a BL8 device [2]
burst_length = 8
# Each device has a page (row buffer) size of 256 bytes [2]
device_rowbuffer_size = '256B'
# 1x32 configuration, so 1 device [2]
devices_per_rank = 1
# 4 layers so 4 ranks [2]
ranks_per_channel = 4
# HMC has 2 banks per layer [2]
# Each layer represents a rank. With 4 layers and 8 banks in total, each
# layer has 2 banks; thus 2 banks per rank.
banks_per_rank = 2
# 1250 MHz [2]
tCK = '0.8ns'
# 8 beats across an x32 interface translates to 4 clocks @ 1250 MHz
tBURST = '3.2ns'
# Values using DRAMSpec HMC model [1]
tRCD = '10.2ns'
tCL = '9.9ns'
tRP = '7.7ns'
tRAS = '21.6ns'
# tRRD depends on the power supply network for each vendor.
# We assume a tRRD of a double bank approach to be equal to 4 clock
# cycles (Assumption)
tRRD = '3.2ns'
# activation limit is set to 0 since there are only 2 banks per vault
# layer.
activation_limit = 0
# Values using DRAMSpec HMC model [1]
tRFC = '59ns'
tWR = '8ns'
tRTP = '4.9ns'
# Default different rank bus delay assumed to 1 CK for TSVs, @1250 MHz =
# 0.8 ns (Assumption)
tCS = '0.8ns'
# Value using DRAMSpec HMC model [1]
tREFI = '3.9us'
# The default page policy in the vault controllers is simple closed page
# [2] nevertheless 'close' policy opens and closes the row multiple times
# for bursts largers than 32Bytes. For this reason we use 'close_adaptive'
page_policy = 'close_adaptive'
# RoCoRaBaCh resembles the default address mapping in HMC
addr_mapping = 'RoCoRaBaCh'
# These parameters do not directly correlate with buffer_size in real
# hardware. Nevertheless, their value has been tuned to achieve a
# bandwidth similar to the cycle-accurate model in [2]
write_buffer_size = 32
read_buffer_size = 32
# A single DDR3-2133 x64 channel refining a selected subset of the
# options for the DDR-1600 configuration, based on the same DDR3-1600
# 4 Gbit datasheet (Micron MT41J512M8). Most parameters are kept
# consistent across the two configurations.
class DDR3_2133_8x8(DDR3_1600_8x8):
# 1066 MHz
tCK = '0.938ns'
# 8 beats across an x64 interface translates to 4 clocks @ 1066 MHz
tBURST = '3.752ns'
# DDR3-2133 14-14-14
tRCD = '13.09ns'
tCL = '13.09ns'
tRP = '13.09ns'
tRAS = '33ns'
tRRD = '5ns'
tXAW = '25ns'
# Current values from datasheet
IDD0 = '70mA'
IDD2N = '37mA'
IDD3N = '44mA'
IDD4W = '157mA'
IDD4R = '191mA'
IDD5 = '250mA'
IDD3P1 = '44mA'
IDD2P1 = '43mA'
IDD6 ='20mA'
VDD = '1.5V'
# A single DDR4-2400 x64 channel (one command and address bus), with
# timings based on a DDR4-2400 8 Gbit datasheet (Micron MT40A2G4)
# in an 16x4 configuration.
# Total channel capacity is 32GiB
# 16 devices/rank * 2 ranks/channel * 1GiB/device = 32GiB/channel
class DDR4_2400_16x4(DRAMInterface):
# size of device
device_size = '1GiB'
# 16x4 configuration, 16 devices each with a 4-bit interface
device_bus_width = 4
# DDR4 is a BL8 device
burst_length = 8
# Each device has a page (row buffer) size of 512 byte (1K columns x4)
device_rowbuffer_size = '512B'
# 16x4 configuration, so 16 devices
devices_per_rank = 16
# Match our DDR3 configurations which is dual rank
ranks_per_channel = 2
# DDR4 has 2 (x16) or 4 (x4 and x8) bank groups
# Set to 4 for x4 case
bank_groups_per_rank = 4
# DDR4 has 16 banks(x4,x8) and 8 banks(x16) (4 bank groups in all
# configurations). Currently we do not capture the additional
# constraints incurred by the bank groups
banks_per_rank = 16
# override the default buffer sizes and go for something larger to
# accommodate the larger bank count
write_buffer_size = 128
read_buffer_size = 64
# 1200 MHz
tCK = '0.833ns'
# 8 beats across an x64 interface translates to 4 clocks @ 1200 MHz
# tBURST is equivalent to the CAS-to-CAS delay (tCCD)
# With bank group architectures, tBURST represents the CAS-to-CAS
# delay for bursts to different bank groups (tCCD_S)
tBURST = '3.332ns'
# @2400 data rate, tCCD_L is 6 CK
# CAS-to-CAS delay for bursts to the same bank group
# tBURST is equivalent to tCCD_S; no explicit parameter required
# for CAS-to-CAS delay for bursts to different bank groups
tCCD_L = '5ns';
# DDR4-2400 17-17-17
tRCD = '14.16ns'
tCL = '14.16ns'
tRP = '14.16ns'
tRAS = '32ns'
# RRD_S (different bank group) for 512B page is MAX(4 CK, 3.3ns)
tRRD = '3.332ns'
# RRD_L (same bank group) for 512B page is MAX(4 CK, 4.9ns)
tRRD_L = '4.9ns';
# tFAW for 512B page is MAX(16 CK, 13ns)
tXAW = '13.328ns'
activation_limit = 4
# tRFC is 350ns
tRFC = '350ns'
tWR = '15ns'
# Here using the average of WTR_S and WTR_L
tWTR = '5ns'
# Greater of 4 CK or 7.5 ns
tRTP = '7.5ns'
# Default same rank rd-to-wr bus turnaround to 2 CK, @1200 MHz = 1.666 ns
tRTW = '1.666ns'
# Default different rank bus delay to 2 CK, @1200 MHz = 1.666 ns
tCS = '1.666ns'
# <=85C, half for >85C
tREFI = '7.8us'
# active powerdown and precharge powerdown exit time
tXP = '6ns'
# self refresh exit time
# exit delay to ACT, PRE, PREALL, REF, SREF Enter, and PD Enter is:
# tRFC + 10ns = 340ns
tXS = '340ns'
# Current values from datasheet
IDD0 = '43mA'
IDD02 = '3mA'
IDD2N = '34mA'
IDD3N = '38mA'
IDD3N2 = '3mA'
IDD4W = '103mA'
IDD4R = '110mA'
IDD5 = '250mA'
IDD3P1 = '32mA'
IDD2P1 = '25mA'
IDD6 = '30mA'
VDD = '1.2V'
VDD2 = '2.5V'
# A single DDR4-2400 x64 channel (one command and address bus), with
# timings based on a DDR4-2400 8 Gbit datasheet (Micron MT40A1G8)
# in an 8x8 configuration.
# Total channel capacity is 16GiB
# 8 devices/rank * 2 ranks/channel * 1GiB/device = 16GiB/channel
class DDR4_2400_8x8(DDR4_2400_16x4):
# 8x8 configuration, 8 devices each with an 8-bit interface
device_bus_width = 8
# Each device has a page (row buffer) size of 1 Kbyte (1K columns x8)
device_rowbuffer_size = '1KiB'
# 8x8 configuration, so 8 devices
devices_per_rank = 8
# RRD_L (same bank group) for 1K page is MAX(4 CK, 4.9ns)
tRRD_L = '4.9ns';
tXAW = '21ns'
# Current values from datasheet
IDD0 = '48mA'
IDD3N = '43mA'
IDD4W = '123mA'
IDD4R = '135mA'
IDD3P1 = '37mA'
# A single DDR4-2400 x64 channel (one command and address bus), with
# timings based on a DDR4-2400 8 Gbit datasheet (Micron MT40A512M16)
# in an 4x16 configuration.
# Total channel capacity is 4GiB
# 4 devices/rank * 1 ranks/channel * 1GiB/device = 4GiB/channel
class DDR4_2400_4x16(DDR4_2400_16x4):
# 4x16 configuration, 4 devices each with an 16-bit interface
device_bus_width = 16
# Each device has a page (row buffer) size of 2 Kbyte (1K columns x16)
device_rowbuffer_size = '2KiB'
# 4x16 configuration, so 4 devices
devices_per_rank = 4
# Single rank for x16
ranks_per_channel = 1
# DDR4 has 2 (x16) or 4 (x4 and x8) bank groups
# Set to 2 for x16 case
bank_groups_per_rank = 2
# DDR4 has 16 banks(x4,x8) and 8 banks(x16) (4 bank groups in all
# configurations). Currently we do not capture the additional
# constraints incurred by the bank groups
banks_per_rank = 8
# RRD_S (different bank group) for 2K page is MAX(4 CK, 5.3ns)
tRRD = '5.3ns'
# RRD_L (same bank group) for 2K page is MAX(4 CK, 6.4ns)
tRRD_L = '6.4ns';
tXAW = '30ns'
# Current values from datasheet
IDD0 = '80mA'
IDD02 = '4mA'
IDD2N = '34mA'
IDD3N = '47mA'
IDD4W = '228mA'
IDD4R = '243mA'
IDD5 = '280mA'
IDD3P1 = '41mA'
# A single LPDDR2-S4 x32 interface (one command/address bus), with
# default timings based on a LPDDR2-1066 4 Gbit part (Micron MT42L128M32D1)
# in a 1x32 configuration.
class LPDDR2_S4_1066_1x32(DRAMInterface):
# No DLL in LPDDR2
dll = False
# size of device
device_size = '512MiB'
# 1x32 configuration, 1 device with a 32-bit interface
device_bus_width = 32
# LPDDR2_S4 is a BL4 and BL8 device
burst_length = 8
# Each device has a page (row buffer) size of 1KB
# (this depends on the memory density)
device_rowbuffer_size = '1KiB'
# 1x32 configuration, so 1 device
devices_per_rank = 1
# Use a single rank
ranks_per_channel = 1
# LPDDR2-S4 has 8 banks in all configurations
banks_per_rank = 8
# 533 MHz
tCK = '1.876ns'
# Fixed at 15 ns
tRCD = '15ns'
# 8 CK read latency, 4 CK write latency @ 533 MHz, 1.876 ns cycle time
tCL = '15ns'
# Pre-charge one bank 15 ns (all banks 18 ns)
tRP = '15ns'
tRAS = '42ns'
tWR = '15ns'
tRTP = '7.5ns'
# 8 beats across an x32 DDR interface translates to 4 clocks @ 533 MHz.
# Note this is a BL8 DDR device.
# Requests larger than 32 bytes are broken down into multiple requests
# in the controller
tBURST = '7.5ns'
# LPDDR2-S4, 4 Gbit
tRFC = '130ns'
tREFI = '3.9us'
# active powerdown and precharge powerdown exit time
tXP = '7.5ns'
# self refresh exit time
tXS = '140ns'
# Irrespective of speed grade, tWTR is 7.5 ns
tWTR = '7.5ns'
# Default same rank rd-to-wr bus turnaround to 2 CK, @533 MHz = 3.75 ns
tRTW = '3.75ns'
# Default different rank bus delay to 2 CK, @533 MHz = 3.75 ns
tCS = '3.75ns'
# Activate to activate irrespective of density and speed grade
tRRD = '10.0ns'
# Irrespective of density, tFAW is 50 ns
tXAW = '50ns'
activation_limit = 4
# Current values from datasheet
IDD0 = '15mA'
IDD02 = '70mA'
IDD2N = '2mA'
IDD2N2 = '30mA'
IDD3N = '2.5mA'
IDD3N2 = '30mA'
IDD4W = '10mA'
IDD4W2 = '190mA'
IDD4R = '3mA'
IDD4R2 = '220mA'
IDD5 = '40mA'
IDD52 = '150mA'
IDD3P1 = '1.2mA'
IDD3P12 = '8mA'
IDD2P1 = '0.6mA'
IDD2P12 = '0.8mA'
IDD6 = '1mA'
IDD62 = '3.2mA'
VDD = '1.8V'
VDD2 = '1.2V'
# A single WideIO x128 interface (one command and address bus), with
# default timings based on an estimated WIO-200 8 Gbit part.
class WideIO_200_1x128(DRAMInterface):
# No DLL for WideIO
dll = False
# size of device
device_size = '1024MiB'
# 1x128 configuration, 1 device with a 128-bit interface
device_bus_width = 128
# This is a BL4 device
burst_length = 4
# Each device has a page (row buffer) size of 4KB
# (this depends on the memory density)
device_rowbuffer_size = '4KiB'
# 1x128 configuration, so 1 device
devices_per_rank = 1
# Use one rank for a one-high die stack
ranks_per_channel = 1
# WideIO has 4 banks in all configurations
banks_per_rank = 4
# 200 MHz
tCK = '5ns'
# WIO-200
tRCD = '18ns'
tCL = '18ns'
tRP = '18ns'
tRAS = '42ns'
tWR = '15ns'
# Read to precharge is same as the burst
tRTP = '20ns'
# 4 beats across an x128 SDR interface translates to 4 clocks @ 200 MHz.
# Note this is a BL4 SDR device.
tBURST = '20ns'
# WIO 8 Gb
tRFC = '210ns'
# WIO 8 Gb, <=85C, half for >85C
tREFI = '3.9us'
# Greater of 2 CK or 15 ns, 2 CK @ 200 MHz = 10 ns
tWTR = '15ns'
# Default same rank rd-to-wr bus turnaround to 2 CK, @200 MHz = 10 ns
tRTW = '10ns'
# Default different rank bus delay to 2 CK, @200 MHz = 10 ns
tCS = '10ns'
# Activate to activate irrespective of density and speed grade
tRRD = '10.0ns'
# Two instead of four activation window
tXAW = '50ns'
activation_limit = 2
# The WideIO specification does not provide current information
# A single LPDDR3 x32 interface (one command/address bus), with
# default timings based on a LPDDR3-1600 4 Gbit part (Micron
# EDF8132A1MC) in a 1x32 configuration.
class LPDDR3_1600_1x32(DRAMInterface):
# No DLL for LPDDR3
dll = False
# size of device
device_size = '512MiB'
# 1x32 configuration, 1 device with a 32-bit interface
device_bus_width = 32
# LPDDR3 is a BL8 device
burst_length = 8
# Each device has a page (row buffer) size of 4KB
device_rowbuffer_size = '4KiB'
# 1x32 configuration, so 1 device
devices_per_rank = 1
# Technically the datasheet is a dual-rank package, but for
# comparison with the LPDDR2 config we stick to a single rank
ranks_per_channel = 1
# LPDDR3 has 8 banks in all configurations
banks_per_rank = 8
# 800 MHz
tCK = '1.25ns'
tRCD = '18ns'
# 12 CK read latency, 6 CK write latency @ 800 MHz, 1.25 ns cycle time
tCL = '15ns'
tRAS = '42ns'
tWR = '15ns'
# Greater of 4 CK or 7.5 ns, 4 CK @ 800 MHz = 5 ns
tRTP = '7.5ns'
# Pre-charge one bank 18 ns (all banks 21 ns)
tRP = '18ns'
# 8 beats across a x32 DDR interface translates to 4 clocks @ 800 MHz.
# Note this is a BL8 DDR device.
# Requests larger than 32 bytes are broken down into multiple requests
# in the controller
tBURST = '5ns'
# LPDDR3, 4 Gb
tRFC = '130ns'
tREFI = '3.9us'
# active powerdown and precharge powerdown exit time
tXP = '7.5ns'
# self refresh exit time
tXS = '140ns'
# Irrespective of speed grade, tWTR is 7.5 ns
tWTR = '7.5ns'
# Default same rank rd-to-wr bus turnaround to 2 CK, @800 MHz = 2.5 ns
tRTW = '2.5ns'
# Default different rank bus delay to 2 CK, @800 MHz = 2.5 ns
tCS = '2.5ns'
# Activate to activate irrespective of density and speed grade
tRRD = '10.0ns'
# Irrespective of size, tFAW is 50 ns
tXAW = '50ns'
activation_limit = 4
# Current values from datasheet
IDD0 = '8mA'
IDD02 = '60mA'
IDD2N = '0.8mA'
IDD2N2 = '26mA'
IDD3N = '2mA'
IDD3N2 = '34mA'
IDD4W = '2mA'
IDD4W2 = '190mA'
IDD4R = '2mA'
IDD4R2 = '230mA'
IDD5 = '28mA'
IDD52 = '150mA'
IDD3P1 = '1.4mA'
IDD3P12 = '11mA'
IDD2P1 = '0.8mA'
IDD2P12 = '1.8mA'
IDD6 = '0.5mA'
IDD62 = '1.8mA'
VDD = '1.8V'
VDD2 = '1.2V'
# A single GDDR5 x64 interface, with
# default timings based on a GDDR5-4000 1 Gbit part (SK Hynix
# H5GQ1H24AFR) in a 2x32 configuration.
class GDDR5_4000_2x32(DRAMInterface):
# size of device
device_size = '128MiB'
# 2x32 configuration, 1 device with a 32-bit interface
device_bus_width = 32
# GDDR5 is a BL8 device
burst_length = 8
# Each device has a page (row buffer) size of 2Kbits (256Bytes)
device_rowbuffer_size = '256B'
# 2x32 configuration, so 2 devices
devices_per_rank = 2
# assume single rank
ranks_per_channel = 1
# GDDR5 has 4 bank groups
bank_groups_per_rank = 4
# GDDR5 has 16 banks with 4 bank groups
banks_per_rank = 16
# 1000 MHz
tCK = '1ns'
# 8 beats across an x64 interface translates to 2 clocks @ 1000 MHz
# Data bus runs @2000 Mhz => DDR ( data runs at 4000 MHz )
# 8 beats at 4000 MHz = 2 beats at 1000 MHz
# tBURST is equivalent to the CAS-to-CAS delay (tCCD)
# With bank group architectures, tBURST represents the CAS-to-CAS
# delay for bursts to different bank groups (tCCD_S)
tBURST = '2ns'
# @1000MHz data rate, tCCD_L is 3 CK
# CAS-to-CAS delay for bursts to the same bank group
# tBURST is equivalent to tCCD_S; no explicit parameter required
# for CAS-to-CAS delay for bursts to different bank groups
tCCD_L = '3ns';
tRCD = '12ns'
# tCL is not directly found in datasheet and assumed equal tRCD
tCL = '12ns'
tRP = '12ns'
tRAS = '28ns'
# RRD_S (different bank group)
# RRD_S is 5.5 ns in datasheet.
# rounded to the next multiple of tCK
tRRD = '6ns'
# RRD_L (same bank group)
# RRD_L is 5.5 ns in datasheet.
# rounded to the next multiple of tCK
tRRD_L = '6ns'
tXAW = '23ns'
# tXAW < 4 x tRRD.
# Therefore, activation limit is set to 0
activation_limit = 0
tRFC = '65ns'
tWR = '12ns'
# Here using the average of WTR_S and WTR_L
tWTR = '5ns'
# Read-to-Precharge 2 CK
tRTP = '2ns'
# Assume 2 cycles
tRTW = '2ns'
# A single HBM x128 interface (one command and address bus), with
# default timings based on data publically released
# ("HBM: Memory Solution for High Performance Processors", MemCon, 2014),
# IDD measurement values, and by extrapolating data from other classes.
# Architecture values based on published HBM spec
# A 4H stack is defined, 2Gb per die for a total of 1GiB of memory.
class HBM_1000_4H_1x128(DRAMInterface):
# HBM gen1 supports up to 8 128-bit physical channels
# Configuration defines a single channel, with the capacity
# set to (full_ stack_capacity / 8) based on 2Gb dies
# To use all 8 channels, set 'channels' parameter to 8 in
# system configuration
# 128-bit interface legacy mode
device_bus_width = 128
# HBM supports BL4 and BL2 (legacy mode only)
burst_length = 4
# size of channel in bytes, 4H stack of 2Gb dies is 1GiB per stack;
# with 8 channels, 128MiB per channel
device_size = '128MiB'
device_rowbuffer_size = '2KiB'
# 1x128 configuration
devices_per_rank = 1
# HBM does not have a CS pin; set rank to 1
ranks_per_channel = 1
# HBM has 8 or 16 banks depending on capacity
# 2Gb dies have 8 banks
banks_per_rank = 8
# depending on frequency, bank groups may be required
# will always have 4 bank groups when enabled
# current specifications do not define the minimum frequency for
# bank group architecture
# setting bank_groups_per_rank to 0 to disable until range is defined
bank_groups_per_rank = 0
# 500 MHz for 1Gbps DDR data rate
tCK = '2ns'
# use values from IDD measurement in JEDEC spec
# use tRP value for tRCD and tCL similar to other classes
tRP = '15ns'
tRCD = '15ns'
tCL = '15ns'
tRAS = '33ns'
# BL2 and BL4 supported, default to BL4
# DDR @ 500 MHz means 4 * 2ns / 2 = 4ns
tBURST = '4ns'
# value for 2Gb device from JEDEC spec
tRFC = '160ns'
# value for 2Gb device from JEDEC spec
tREFI = '3.9us'
# extrapolate the following from LPDDR configs, using ns values
# to minimize burst length, prefetch differences
tWR = '18ns'
tRTP = '7.5ns'
tWTR = '10ns'
# start with 2 cycles turnaround, similar to other memory classes
# could be more with variations across the stack
tRTW = '4ns'
# single rank device, set to 0
tCS = '0ns'
# from MemCon example, tRRD is 4ns with 2ns tCK
tRRD = '4ns'
# from MemCon example, tFAW is 30ns with 2ns tCK
tXAW = '30ns'
activation_limit = 4
# 4tCK
tXP = '8ns'
# start with tRFC + tXP -> 160ns + 8ns = 168ns
tXS = '168ns'
# A single HBM x64 interface (one command and address bus), with
# default timings based on HBM gen1 and data publically released
# A 4H stack is defined, 8Gb per die for a total of 4GiB of memory.
# Note: This defines a pseudo-channel with a unique controller
# instantiated per pseudo-channel
# Stay at same IO rate (1Gbps) to maintain timing relationship with
# HBM gen1 class (HBM_1000_4H_x128) where possible
class HBM_1000_4H_1x64(HBM_1000_4H_1x128):
# For HBM gen2 with pseudo-channel mode, configure 2X channels.
# Configuration defines a single pseudo channel, with the capacity
# set to (full_ stack_capacity / 16) based on 8Gb dies
# To use all 16 pseudo channels, set 'channels' parameter to 16 in
# system configuration
# 64-bit pseudo-channle interface
device_bus_width = 64
# HBM pseudo-channel only supports BL4
burst_length = 4
# size of channel in bytes, 4H stack of 8Gb dies is 4GiB per stack;
# with 16 channels, 256MiB per channel
device_size = '256MiB'
# page size is halved with pseudo-channel; maintaining the same same number
# of rows per pseudo-channel with 2X banks across 2 channels
device_rowbuffer_size = '1KiB'
# HBM has 8 or 16 banks depending on capacity
# Starting with 4Gb dies, 16 banks are defined
banks_per_rank = 16
# reset tRFC for larger, 8Gb device
# use HBM1 4Gb value as a starting point
tRFC = '260ns'
# start with tRFC + tXP -> 160ns + 8ns = 168ns
tXS = '268ns'
# Default different rank bus delay to 2 CK, @1000 MHz = 2 ns
tCS = '2ns'
tREFI = '3.9us'
# active powerdown and precharge powerdown exit time
tXP = '10ns'
# self refresh exit time
tXS = '65ns'
# A single LPDDR5 x16 interface (one command/address bus)
# for a single x16 channel with default timings based on
# initial JEDEC specification
# Starting with 5.5Gbps data rates and 8Gbit die
# Configuring for 16-bank mode with bank-group architecture
# burst of 32, which means bursts can be interleaved
class LPDDR5_5500_1x16_BG_BL32(DRAMInterface):
# Increase buffer size to account for more bank resources
read_buffer_size = 64
# Set page policy to better suit DMC Huxley
page_policy = 'close_adaptive'
# 16-bit channel interface
device_bus_width = 16
# LPDDR5 is a BL16 or BL32 device
# With BG mode, BL16 and BL32 are supported
# Use BL32 for higher command bandwidth
burst_length = 32
# size of device in bytes
device_size = '1GiB'
# 2KiB page with BG mode
device_rowbuffer_size = '2KiB'
# Use a 1x16 configuration
devices_per_rank = 1
# Use a single rank
ranks_per_channel = 1
# LPDDR5 supports configurable bank options
# 8B : BL32, all frequencies
# 16B : BL32 or BL16, <=3.2Gbps
# 16B with Bank Group Arch (4B/BG): BL32 or BL16, >3.2Gbps
# Initial configuration will have 16 banks with Bank Group Arch
# to maximim resources and enable higher data rates
banks_per_rank = 16
bank_groups_per_rank = 4
# 5.5Gb/s DDR with 4:1 WCK:CK ratio for 687.5 MHz CK
tCK = '1.455ns'
# Greater of 2 CK or 18ns
tRCD = '18ns'
# Base RL is 16 CK @ 687.5 MHz = 23.28ns
tCL = '23.280ns'
# Greater of 2 CK or 18ns
tRP = '18ns'
# Greater of 3 CK or 42ns
tRAS = '42ns'
# Greater of 3 CK or 34ns
tWR = '34ns'
# active powerdown and precharge powerdown exit time
# Greater of 3 CK or 7ns
tXP = '7ns'
# self refresh exit time (tRFCab + 7.5ns)
tXS = '217.5ns'
# Greater of 2 CK or 7.5 ns minus 2 CK
tRTP = '4.59ns'
# With BG architecture, burst of 32 transferred in two 16-beat
# sub-bursts, with a 16-beat gap in between.
# Each 16-beat sub-burst is 8 WCK @2.75 GHz or 2 CK @ 687.5 MHz
# tBURST is the delay to transfer the Bstof32 = 6 CK @ 687.5 MHz
tBURST = '8.73ns'
# can interleave a Bstof32 from another bank group at tBURST_MIN
# 16-beats is 8 WCK @2.75 GHz or 2 CK @ 687.5 MHz
tBURST_MIN = '2.91ns'
# tBURST_MAX is the maximum burst delay for same bank group timing
# this is 8 CK @ 687.5 MHz
tBURST_MAX = '11.64ns'
# 8 CK @ 687.5 MHz
tCCD_L = "11.64ns"
# LPDDR5, 8 Gbit/channel for 280ns tRFCab
tRFC = '210ns'
tREFI = '3.9us'
# Greater of 4 CK or 6.25 ns
tWTR = '6.25ns'
# Greater of 4 CK or 12 ns
tWTR_L = '12ns'
# Required RD-to-WR timing is RL+ BL/n + tWCKDQ0/tCK - WL
# tWCKDQ0/tCK will be 1 CK for most cases
# For gem5 RL = WL and BL/n is already accounted for with tBURST
# Result is and additional 1 CK is required
tRTW = '1.455ns'
# Default different rank bus delay to 2 CK, @687.5 MHz = 2.91 ns
tCS = '2.91ns'
# 2 CK
tPPD = '2.91ns'
# Greater of 2 CK or 5 ns
tRRD = '5ns'
tRRD_L = '5ns'
# With Bank Group Arch mode tFAW is 20 ns
tXAW = '20ns'
activation_limit = 4
# at 5Gbps, 4:1 WCK to CK ratio required
# 2 data beats per WCK (DDR) -> 8 per CK
beats_per_clock = 8
# 2 cycles required to send activate command
# 2 command phases can be sent back-to-back or
# with a gap up to tAAD = 8 CK
two_cycle_activate = True
tAAD = '11.640ns'
data_clock_sync = True
# A single LPDDR5 x16 interface (one command/address bus)
# for a single x16 channel with default timings based on
# initial JEDEC specification
# Starting with 5.5Gbps data rates and 8Gbit die
# Configuring for 16-bank mode with bank-group architecture, burst of 16
class LPDDR5_5500_1x16_BG_BL16(LPDDR5_5500_1x16_BG_BL32):
# LPDDR5 is a BL16 or BL32 device
# With BG mode, BL16 and BL32 are supported
# Use BL16 for smaller access granularity
burst_length = 16
# For Bstof16 with BG arch, 2 CK @ 687.5 MHz with 4:1 clock ratio
tBURST = '2.91ns'
tBURST_MIN = '2.91ns'
# For Bstof16 with BG arch, 4 CK @ 687.5 MHz with 4:1 clock ratio
tBURST_MAX = '5.82ns'
# 4 CK @ 687.5 MHz
tCCD_L = "5.82ns"
# A single LPDDR5 x16 interface (one command/address bus)
# for a single x16 channel with default timings based on
# initial JEDEC specification
# Starting with 5.5Gbps data rates and 8Gbit die
# Configuring for 8-bank mode, burst of 32
class LPDDR5_5500_1x16_8B_BL32(LPDDR5_5500_1x16_BG_BL32):
# 4KiB page with 8B mode
device_rowbuffer_size = '4KiB'
# LPDDR5 supports configurable bank options
# 8B : BL32, all frequencies
# 16B : BL32 or BL16, <=3.2Gbps
# 16B with Bank Group Arch (4B/BG): BL32 or BL16, >3.2Gbps
# Select 8B
banks_per_rank = 8
bank_groups_per_rank = 0
# For Bstof32 with 8B mode, 4 CK @ 687.5 MHz with 4:1 clock ratio
tBURST = '5.82ns'
tBURST_MIN = '5.82ns'
tBURST_MAX = '5.82ns'
# Greater of 4 CK or 12 ns
tWTR = '12ns'
# Greater of 2 CK or 10 ns
tRRD = '10ns'
# With 8B mode tFAW is 40 ns
tXAW = '40ns'
activation_limit = 4
# Reset BG arch timing for 8B mode
tCCD_L = "0ns"
tRRD_L = "0ns"
tWTR_L = "0ns"
# A single LPDDR5 x16 interface (one command/address bus)
# for a single x16 channel with default timings based on
# initial JEDEC specification
# 6.4Gbps data rates and 8Gbit die
# Configuring for 16-bank mode with bank-group architecture
# burst of 32, which means bursts can be interleaved
class LPDDR5_6400_1x16_BG_BL32(LPDDR5_5500_1x16_BG_BL32):
# 5.5Gb/s DDR with 4:1 WCK:CK ratio for 687.5 MHz CK
tCK = '1.25ns'
# Base RL is 17 CK @ 800 MHz = 21.25ns
tCL = '21.25ns'
# With BG architecture, burst of 32 transferred in two 16-beat
# sub-bursts, with a 16-beat gap in between.
# Each 16-beat sub-burst is 8 WCK @3.2 GHz or 2 CK @ 800 MHz
# tBURST is the delay to transfer the Bstof32 = 6 CK @ 800 MHz
tBURST = '7.5ns'
# can interleave a Bstof32 from another bank group at tBURST_MIN
# 16-beats is 8 WCK @2.3 GHz or 2 CK @ 800 MHz
tBURST_MIN = '2.5ns'
# tBURST_MAX is the maximum burst delay for same bank group timing
# this is 8 CK @ 800 MHz
tBURST_MAX = '10ns'
# 8 CK @ 800 MHz
tCCD_L = "10ns"
# Required RD-to-WR timing is RL+ BL/n + tWCKDQ0/tCK - WL
# tWCKDQ0/tCK will be 1 CK for most cases
# For gem5 RL = WL and BL/n is already accounted for with tBURST
# Result is and additional 1 CK is required
tRTW = '1.25ns'
# Default different rank bus delay to 2 CK, @687.5 MHz = 2.5 ns
tCS = '2.5ns'
# 2 CK
tPPD = '2.5ns'
# 2 command phases can be sent back-to-back or
# with a gap up to tAAD = 8 CK
tAAD = '10ns'
# A single LPDDR5 x16 interface (one command/address bus)
# for a single x16 channel with default timings based on initial
# JEDEC specifcation
# 6.4Gbps data rates and 8Gbit die
# Configuring for 16-bank mode with bank-group architecture, burst of 16
class LPDDR5_6400_1x16_BG_BL16(LPDDR5_6400_1x16_BG_BL32):
# LPDDR5 is a BL16 or BL32 device
# With BG mode, BL16 and BL32 are supported
# Use BL16 for smaller access granularity
burst_length = 16
# For Bstof16 with BG arch, 2 CK @ 800 MHz with 4:1 clock ratio
tBURST = '2.5ns'
tBURST_MIN = '2.5ns'
# For Bstof16 with BG arch, 4 CK @ 800 MHz with 4:1 clock ratio
tBURST_MAX = '5ns'
# 4 CK @ 800 MHz
tCCD_L = "5ns"
# A single LPDDR5 x16 interface (one command/address bus)
# for a single x16 channel with default timings based on
# initial JEDEC specification
# 6.4Gbps data rates and 8Gbit die
# Configuring for 8-bank mode, burst of 32
class LPDDR5_6400_1x16_8B_BL32(LPDDR5_6400_1x16_BG_BL32):
# 4KiB page with 8B mode
device_rowbuffer_size = '4KiB'
# LPDDR5 supports configurable bank options
# 8B : BL32, all frequencies
# 16B : BL32 or BL16, <=3.2Gbps
# 16B with Bank Group Arch (4B/BG): BL32 or BL16, >3.2Gbps
# Select 8B
banks_per_rank = 8
bank_groups_per_rank = 0
# For Bstof32 with 8B mode, 4 CK @ 800 MHz with 4:1 clock ratio
tBURST = '5ns'
tBURST_MIN = '5ns'
tBURST_MAX = '5ns'
# Greater of 4 CK or 12 ns
tWTR = '12ns'
# Greater of 2 CK or 10 ns
tRRD = '10ns'
# With 8B mode tFAW is 40 ns
tXAW = '40ns'
activation_limit = 4
# Reset BG arch timing for 8B mode
tCCD_L = "0ns"
tRRD_L = "0ns"
tWTR_L = "0ns"